E
HEXFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching Fully Avalanche Rated
3205
®
Power MOSFET
V
DSS
= 54 V
I
D25
= 110A
R
DS(ON)
= 0.009
Ω
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC =
100°C
Max.
Units
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
①
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current①
Repetitive Avalanche Energy①
Peak Diode Recovery dv/dt
.
③
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
110
80
390
150
1.3
± 20
62
20
5.0
-55 to + 175
°C
300 (1.6mm from
case )
10 lbf•in (1.1N•m)
W
W/°C
V
A
mJ
V/ns
A
I
DM
PD @TC = 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
1
ESTEK [ Estek Electronics Co. Ltd ]
