E 50N06
HEXFET
Dynamic dv/dt Rating
175
ْC
Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
®
Power MOSFET
V
DSS
= 60V
I
D25
= 50A
R
DS(ON)
= 0.022Ω
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
I
D
@T
C
=25
ْC
I
D
@T
C
=100ْC
I
DM
P
D
@T
C
=25ْC
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@10V
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
③
②
①
Max.
50*
36
200
140
1.0
±20
100
4.5
–55
to +175
300(1.6mm from case)
10 Ibf
●
in(1.1N
●
m)
Units
A
W
W/
ْC
V
mJ
V/ns
ْC
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
—
0.50
—
Max.
1.0
—
62
ْC/W
Units
1
ESTEK [ Estek Electronics Co. Ltd ]
