E 75N075
HEXFET
Dynamic dv/dt Rating
175°C Operating Temperature
Fast switching
Ease of Paralleling
Simple Drive Requirements
®
Power MOSFET
V
DSS
= 75V
I
D25
= 75A
R
DS(ON)
= 13.0
mΩ
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50watts. The low
thermal resistance and low package cost of the TO-220 contribute to its
wide acceptance throughout the industry.
Pin1–Gate
Pin2–Drain
Pin3–Source
Absolute Maximum Ratings
Parameter
I
D
@T
C
=25°C
I
DM
Continuous Drain Current, V
GS
@10V
Pulsed Drain Current
②
Max.
75
60
300
200
1.5
±20
③
①
Units
A
W
W/°C
V
mJ
V/ns
ْ
°C
I
D
@T
C
=100°C Continuous Drain Current, V
GS
@10V
P
D
@T
C
=25°C Power Dissipation
Linear Derating Factor
V
GS
E
AR
dv/dt
T
J
T
STG
Gate-to-Source Voltage
Single Pulse
Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque,6-32 or M3 screw
④
23
5.9
–55
to +175
300(1.6mm from case)
10 Ibf
.
in(1.1N
.
m)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
—
—
—
Typ.
—
0.50
—
Max.
0.65
—
62
ْ
°C /W
Units
1