ET- 740
N-Channel MOSFET
Features
■
■
■
■
■
R
DS(on)
(Max 0.55
Ω
)@V
GS
=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
●
2. Drain
1. Gate
◀
●
●
▲
3. Source
General Description
This Power MOSFET is produced using Integral’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
400
10
6.3
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
±
25
450
13.4
5.5
134
1.08
- 55 ~ 150
300
Thermal Characteristics
Value
Min.
-
-
-
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Typ.
-
0.5
-
Max.
0.93
-
62.5
Units
°C/W
°C/W
°C/W
Ver.00/21.08.2009
IFP740-TSe.doc
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