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ET-840 参数 Datasheet PDF下载

ET-840图片预览
型号: ET-840
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET [N-Channel MOSFET]
分类和应用:
文件页数/大小: 2 页 / 1643 K
品牌: ESTEK [ Estek Electronics Co. Ltd ]
 浏览型号ET-840的Datasheet PDF文件第2页  
ET- 840
N-Channel MOSFET
Features
R
DS(on)
(Max 0.85
)@V
GS
=10V
Gate Charge (Typical 38nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
Symbol
2. Drain
1. Gate
3. Source
General Description
This Power MOSFET is produced using Integral’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switching DC/DC converters, switch mode power
supply, DC-AC converters for uninterruped power supply, motor
control.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG,
T
J
T
L
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25
°C)
Continuous Drain Current(@T
C
= 100
°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 2)
(Note 1)
(Note 3)
(Note 1)
Parameter
Value
500
8.0
5.1
32
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
±
25
320
13.4
5.5
134
1.08
- 55 ~ 150
300
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
0.5
-
Max.
0.93
-
62.5
Units
°C/W
°C/W
°C/W
Ver.00/21.08.2009
IFP840-TSe.doc
Page 1 of 2
BEIJING ESTEK ELECTRONICS CO.,LTD