ET4N60
600V, 4A, N-Channel Power MOSFET
Features
V
DSS
=600V
I
DS
=4A
R
DS(ON)
=2.5
Ω
R
DS(ON)
= (Max. 2.5
Ω)@V
GS
=10V.
Gate Charge (Typical 15nC).
Improved dv/dt Capability,
High Ruggedness.
100% Avalanche Tested.
Maximum Junction Temperature
Range(150
o
C).
Symbol
Applications
Switching Application
Adaptor
LED Lighting
Pin Description
Ordering Information
Part Number
ET4N60-220-T
ET4N60-220F-T
ET4N60-252-T
ET4N60-252-R
www.estek.com.cn
Package
TO-220
TO-220F
TO-252
TO-252
Pin Assignment
1
2
3
G
G
G
G
1
Packing
Tube
Tube
Tube
Tape Reel
D
D
D
D
S
S
S
S
Copyright @ Estek Electronics Co., Ltd
Version 0.2
26 Sep 2011