ET75N08
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
dv/dt
P
D
T
STG
T
J
Notes:
(1)..
(2)..
(3)..
Parameter
Drain to Source Voltage
Continuous Drain Current(@T
C
= 25 °C)
Continuous Drain Current(@T
C
= 100 °C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@T
C
= 25 °C)
Derating Factor above 25 °C
Storage Temperature
Junction Temperature
Value
80
75
52.5
320
..(1)
±25
800
..(2)
17.3
..(1)
12
..(3)
300
1.15
-55 ~ +175
+175
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Repeativity rating : pulse width limited by junction temperature
I
AS
= 40 A, V
DD
= 37.5 V, R
G
= 25
Ω
, Starting T
J
= 25 °C
I
SD
≤
80 A, di/dt
≤
300 A/us, V
DD
≤
BV
DSS
, Starting T
J
= 25 °C
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Value
Min.
-
-
-
Typ.
-
0.5
-
Max.
0.87
-
62.5
Units
°C/W
°C/W
°C/W
Source-Drain Diode Characteristics and Maximum Ratings
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
-
-
Typ.
-
-
-
132
660
Max.
75
A
320
1.5
-
-
V
ns
Units
Maximum Continuous Source-Drain Diode
Forward Current
Maximum Pulsed Source-Drain Diode
Forward Current
Diode Forward
Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
I
S
= 75 A, V
GS
= 0 V
I
S
= 75 A,
V
DD
= 25 V,
dIF/dt = 100 A/us
uC
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Copyright @ Estek Electronics Co., Ltd
Version 0.2
1st Nov 2011
ESTEK [ Estek Electronics Co. Ltd ]
