ET840
9 Amps，500Volts
，
N-Channel MOSFET
■
Description
The ET840 N-Channel enhancement mode silicon gate
power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers
.
■
Features
R
DS(ON)
= 0.80 @V
GS
= 10 V
Low gate charge ( typical 30nC)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■
Symbol
■
Absolute Maximum Ratings
(T
c
=25℃,unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet Continuous
Drain Current Pulsed
Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation
Junction Temperature
Storage Temperature
＊
Symbol
V
DSS
V
GSS
T
c
=25℃
T
c
=100℃
(Note 1)
I
DP
E
AR
E
AS
dv/dt
P
D
T
J
T
STG
139
1.11
I
D
9.0
5.4
36
Ratings
TO-220
500
±30
9.0
5.4
36
13.9
360
4.5
45.5
0.36
+150
-55~+150
＊
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
TO-220F
＊
＊
Repetitive
Single Pulse
(Note 1)
(Note 2)
(Note 3)
T
c
=25℃
Derate above 25℃
Drain current limited by maximum junction temperature.
1
BEIJING ESTEK ELECTRONICS CO.,LTD
ESTEK [ Estek Electronics Co. Ltd ]
