P3356
SPECIFICATIONS
Electrical
At T = 25ºC and as circuit Fig. 2 unless otherwise stated.
Parameter
Conditions
Min
-
Typ
1.5
Max
-
Units
dB
Insertion Loss
f = 2kHz, RL = 600Ω
Frequency Response
LF -3dB cutoff
HF -3dB cutoff
100Hz – 4kHz
-
-
-
10
55
-
-
-
Hz
kHz
dB
±0.1
Return Loss(5)
200Hz – 4kHz
200Hz – 4kHz
16
20
-
-
-
-
dB
dB
Transhybrid Loss(5)
Third Harmonic
Distortion(1)
150Hz -3dBm in line
200Hz -10dBm in line
-
-
-70
-89
-
-
dBm
dBm
Voltage Isolation(2)
50Hz
DC
2.12
3.0
-
-
-
-
kVrms
kV
Operating Range:
Functional
Storage
0
-40
-
-
+70
+85
ºC
ºC
Lumped equivalent circuit parameters as Fig. 1
DC resistance (3)
Primary resistance RDCp
Secondary resistance RDCs
70
95
-
-
87
120
Ω
Ω
3
6
3.9
9
5
-
mH
H
Leakage inductance, ΔL
Shunt inductance, Lp(4)
Shunt loss, Rp
200Hz, 10mV
200Hz, 10mV
12
15
-
kΩ
Notes:
Equivalent Circuit
Fig . 1
1. Third harmonic typically exceeds other
harmonics by 10dB.
2. Components are 100% tested at 3.25kVDC.
3. Caution: do not pass DC through windings.
Telephone line current must be diverted using
semiconductor line hold circuit or choke.
4. At signal levels greater than 100mV, Lp will
increase and Rp will decrease slightly but the
effect is usually favourable to the return loss
characteristic.
IDEAL
1:1
½
L
½
L
5. Return loss and transhybrid loss can be
improved to 30dB in improved matching circuit.
The values shown relate to the simplest
configuration, Fig. 2.
ETALDOC 591/11
Page 2 of 6
December 2005
ETAL [ ETAL Group ]
