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SKTS086N08N PDF Datasheet浏览和下载

型号.:
SKTS086N08N
PDF下载:
下载PDF文件
内容描述:
[Power Supply DC-DC Converter]
文件大小:
881 K
文件页数:
7 Pages
品牌Logo:
品牌名称:
未知厂家 [ ETC ]
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中航一级代理
龙创威电子 小柯13652437521
SKTS086N08N
V
DSS
R
DS(
on) typ.
max.
I
D(Silicon Limited)
I
D(Package Limited)
80V
6.5mΩ
8.6mΩ
100A
80A
Features
Lead free and Green Device Available
Low Rds-on to Minimize Conductive Loss
High avalanche Current
Application
Power Supply
DC-DC Converter
Absolute Maximum Ratings
(T
A
=25°C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
I
DP
I
AS
E
AS
P
D
T
J,
T
STG
Param
Drain-to-Source Voltage
eter
Gate-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current (L=0.5mH)
T =25°C
Avalanche Energy (L=0.5mH)
T =25°C
Maximum Power Dissipation
Junction & Storage Temperature Range
Thermal Characteristics
Symbol
R
thJC
Electrical Characteristics
(TA=25°C unless otherwise noted)
Symbol
Parameter
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(on)
G
fs
H
R
thJA
D
u
Parameter
Thermal resistance, junction to case
n
u
T
C
=25°C (Silicon limited)
T
C
=25°C (Package limited)
T
C
=100°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
e
D
Max.
0.83
88
80
2
Maximum
80
±25
100
80
o
m
Unit
V
V
A
A
A
mJ
W
°C
70
-
25
156
180
90
-55~175
Unit
℃/W
℃/W
Thermal resistance, junction to ambient
Test Conditions
V
GS
=0V,I
D
=250uA
V
DS
=80V,V
GS
=0V
V
DS
=V
GS
,I
D
=250uA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=40A
VDS=5V, ID=40A
Min. Typ Max.
6.5
84
Unit
V
uA
V
nA
mΩ
S
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
1
4
±100
8.6
Drain-Source On-Resistance
Forward Transconductance
www.skysilicon.com
SKYSILICON Co., Ltd.
1
Jun 20, 2016