Dual SCHOTTKY Barrier Diodes
These SCHOTTKY barrier diodes are designed for high speed switching
applications, circuit protection, and vol tage clamping. Extremely low forward
voltage reduces conduction loss. Miniature surface mount package is excellent
for hand held and portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 V @ I
F
= 10 mAdc
Cathode
6
N/C
5
Anode
4
6
5
4
MBD54DWT1
30 VOLTS
DUAL HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
1
2
3
1
Anode
2
N/C
3
Cathode
SOT–363
CASE 419B–01, STYLE 6
MAXIMUM RATINGS
(T = 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
Value
30
150
I
F
T
J
T
stg
1.2
200 Max
125 Max
–55 to +150
Unit
Volts
mW
mW/°C
mA
°C
°C
DEVICE MARKING
MBD54DWT1 = BL
ELECTRICAL CHARACT
ERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
µA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time
Symbol
V
(BR)R
C
T
I
R
V
F
V
V
F
F
Min
30
—
—
—
—
—
—
—
—
—
—
—
Typ
—
7.6
0.5
0.22
0.41
0.52
—
0.29
0.35
—
—
—
Max
—
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
Volts
pF
µAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
t
rr
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc) Figure 1
Forward Voltage (I F = 1.0 mAdc)
V
F
Forward Voltage (I F = 10 mAdc)
V
F
Forward Current (DC)
I
F
Repetitive Peak Forward Current
I
FRM
Non–Repetitive Peak Forward Current (t <1.0s) I
FSM
MBD54–1/4
ETL [ E-TECH ELECTRONICS LTD ]
