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MBT3906DW1T1 参数 Datasheet PDF下载

MBT3906DW1T1图片预览
型号: MBT3906DW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 10 页 / 720 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (2)
(I
C
= 1.0 mAdc, I
B
= 0)
MBT3904DW1T1 (NPN)
(I
C
= –1.0 mAdc, I
B
= 0)
MBT3906DW1T1 (PNP)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
MBT3904DW1T1 (NPN)
(I
C
= –10
µAdc,
I
E
= 0)
MBT3906DW1T1 (PNP)
Emitter–Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
(I
E
= –10
µAdc,
I
C
= 0)
Base Cutoff Current
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
I
BL
I
CEX
h
FE
40
70
100
60
30
60
80
100
60
30
V
CE(sat)
V
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
BE(sat)
Symbol
V
(BR)CEO
Min
Max
Unit
Vdc
40
–40
V
(BR)CBO
60
–40
V
(BR)EBO
Vdc
Vdc
nAdc
50
–50
nAdc
50
–50
Vdc
Vdc
0.2
0.3
– 0.25
–0.4
Vdc
0.85
0.95
–0.85
–0.95
MHz
6.0
–5.0
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
MBT3904DW1T1 (NPN)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc) MBT3906DW1T1 (PNP)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
MBT3904DW1T1 (NPN)
(V
CE
= –30 Vdc, V
EB
= –3.0 Vdc) MBT3906DW1T1 (PNP)
ON CHARACTERISTICS (2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= –0.1 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –1.0 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –10 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –50 mAdc, V
CE
= –1.0 Vdc)
(I
C
= –100 mAdc, V
CE
= –1.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MBT3904DW1T1 (NPN)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= –10 mAdc, I
B
= –1.0 mAdc)
(I
C
= –50 mAdc, I
B
= –5.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
(I C = 50 mAdc, I B = 5.0 mAdc)
(I C = –10 mAdc, I B = –1.0 mAdc)
(I C = –50 mAdc, I B = –5.0 mAdc)
Current–Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc,
f = 100 MHz)
(I
C
= –10 mAdc, V
CE
= –20 Vdc,
f = 100 MHz)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
0.65
–0.65
f
T
300
250
C
obo
C
ibo
SMALL–SIGNAL CHARACTERISTICS
pF
4.0
4.5
pF
8.0
10.0
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
(V
CB
= –5.0 Vdc, I
E
= 0,
MBT3906DW1T1 (PNP)
f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz) MBT3904DW1T1 (NPN)
(V
EB
= –0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MBT3906DW1T1 (PNP)
2. Pulse Test: Pulse Width < 300 ms; Duty Cycle< 2.0%.
MBT3904–2/12