MC74VHC1G03
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
θ
JA
T
L
T
J
T
stg
V
ESD
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power dissipation in still air
Thermal resistance
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage temperature
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
CC
=0
High or Low State
V
OUT
< GND; V
OUT
> V
CC
Value
– 0.5 to + 7.0
– 0.5 to 7.0
– 0.5 to 7.0
–0.5 to V
cc
+ 0.5
–20
+20
+ 25
+50
200
333
260
+ 150
–65 to +150
>2000
> 200
N/A
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
SC–88A, TSOP–5
SC–88A, TSOP–5
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 5)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is
not implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
,t
f
Parameter
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
Min
2.0
0.0
0.0
– 55
0
0
Max
5.5
5.5
7.0
+ 125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Temperature °C
80
90
100
110
120
130
140
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
Junction
Time,
Time,
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time
Junction Temperature
VH3–2/4
ETL [ E-TECH ELECTRONICS LTD ]
