MC74VHC1GT66
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
IS
I
IK
I
CC
P
D
T
L
T
stg
V
ESD
DC Supply Voltage
DC Input Voltage
Analog Output Voltage
Input Diode Current
DC Supply Current, V
CC
and GND
Power dissipation in still air
Lead Temperature, 1 mm from Case for 10 s
Storage temperature
ESD Withstand Voltage
Human Body Model (Note 3)
Machine Model (Note 4)
Charged Device Model (Note 5)
Parameter
Value
– 0.5 to + 7.0
– 0.5 to +7.0
–0.5 to +7.0
–20
+25
200
450
260
–65 to +150
>2000
> 200
N/A
Unit
V
V
V
mA
mA
mW
°C
°C
V
SC–88A (Note 2.)
TSOP5 (Note 2.)
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 6)
± 500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions
eyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied. Functional operation should be restricted to the Recommended Operating Conditions.
2. Derating – SC–88A Package: –3 mW/°C from 65°C to 125°C
– TSOP5 Package: –6 mW/°C from 65°C to 125°C
3. Tested to EIA/JESD22–A114–A
4. Tested to EIA/JESD22–A115–A
5. Tested to JESD22–C101–A
6. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
V
CC
V
IN
V
IS
T
A
t
r
,t
f
DC Supply Voltage
DC Input Voltage
Analog Input Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 ± 0.3 V
V
CC
= 5.0 ± 0.5 V
Min
2.0
GND
GND
– 55
0
0
Max
5.5
5.5
V
CC
+ 125
100
20
Unit
V
V
V
°C
ns/V
The
θ
JA
of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the
table and figure below.
Junction
Temperature °C
80
90
100
110
120
130
140
Time,
Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time,
Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VHT66–2/6
ETL [ E-TECH ELECTRONICS LTD ]
