Silicon Tuning Diode
MMBV105GLT1
This device is designed in the surface Mount package for
general frequency control and tuning applications.It provides
solid-state reliability in replacement of mechanical
tuning methods.
•
Controlled and Uniform Tuning Ration
1
2
3
3
CATHODE
1
ANODE
CASE
318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
30
200
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV105GLT1=M4E
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
( I
R
=10µAdc)
Reverse Voltage Leakage Current
( V
R
=28Vdc)
Symbol
V
(BR)R
I
R
Min
30
—
Max
—
50
Unit
Vdc
nAdc
Device Type
C
T
V
R
=25Vdc,f =1.0MHz
pF
Min
Max
2.8
Q
V
R
=3.0Vdc
f=50MHz
Typ
250
C
R
C
3
/ C
25
f=1.0MHz
Min
4.0
Max
6.5
MMBV105GLT1
1.5
I1–1/2
ETL [ E-TECH ELECTRONICS LTD ]
