Silicon Tuning Diode
This device is designed for 900 MHz frequency control
and tuning applications. It provides solid–state reliability in
replacement of mechanical tuning methods.
•
Controlled and Uniform Tuning Ratio
•
Available in Surface Mount Package
•
Available in 8 mm Tape and Reel
1
MMBV809LT1
3
1
ANODE
(
3
CATHODE
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation
(1)
@T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
20
20
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV809LT1=5K
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10µAdc)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Symbol
V
(BR)R
I
R
Min
20
—
Max
—
50
Unit
Vdc
nAdc
C
T
Diode Capacitance
Device Type
V
R
=2.0Vdc,f=1.0MHz
pF
Min
MMBV809LT1
4.5
Q,Figure of Merit
V
R
=3.0Vdc
f=500MHz
Typ
75
C
R
,Capacitance Ratio
C
2
/ C
8
f=1.0MHz(2)
Min
1.8
Typ
5.3
Max
6.1
Max
2.6
1. FR-5 Board 1.0 x 0.75 x 0.62 in.
2. C
R
is the ratio of C
t
measured at 2.0 Vdc divided by C
t
measured at 8.0 vdc
I5–1/2
ETL [ E-TECH ELECTRONICS LTD ]
