Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency
UHF and VHF detector applications. Readily available to many
other fast switching RF and digital applications.
MMDL101T1
1.0 pF SCHOTTKY
BARRIER DIODE
•
Very Low Capacitance — Less than 1.0 pF @ Zero Volts
•
Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
•
Device Marking: 4M
1
1
CATHODE
2
ANODE
2
PLASTIC SOD– 323
CASE 477
MAXIMUM RATINGS
Symbol
V
R
Rating
Reverse Voltage
Value
7.0
Unit
Vdc
THERMAL CHARACTERISTICS
Symbol
P
D
Characteristic
Total Device Dissipation FR–5 Board,*
T
A
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage
Temperature Range
Max
200
1.57
635
–55 to+150
Unit
mW
mW/°C
°C/W
°C
R
θJA
T
J
, T
stg
*FR–5 Minimum Pad
ORDERING INFORMATION
Device
MMDL101T1
Package
SOD–323
Shipping
3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
µA)
Diode Capacitance
(V
R
= 0, f = 1.0MHz, Note 1)
Reverse Leakage
(V
R
= 3.0 V)
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I
F
= 10 mA)
*Notes on Next Page
Symbol
V
(BR)R
C
T
I
R
NF
V
Min
7.0
Typ
10
Max
—
Unit
Volts
pF
nAdc
dB
Vdc
—
—
—
—
0.88
20
6.0
0.5
1.0
250
—
0.6
F
S1–1/3
ETL [ E-TECH ELECTRONICS LTD ]
