PNP General Purpose Amplifier
Transistor Surface Mount
COLLECTOR
3
MSB709-RT1
3
1
2
2
BASE
1
EMITTER
CASE 318D–03, STYLE1
SC–59
MAXIMUM RATINGS
(T
A
= 25 °C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Collector Current - Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Symbol
P
D
T
J
T
stg
Value
–60
–45
–7.0
–100
–200
Max
200
150
–55 ~ +150
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
V
CE(sat)
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
Min
–45
–60
–7.0
—
—
210
—
Max
—
—
—
–0.1
–100
340
–0.5
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
—
Vdc
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Characteristic
Collector-Emitter Breakdown Voltage (I
C
=–2.0mAdc,I
B
=0)
Collector-Base Breakdown Voltage (I
C
=–10µAdc,I
E
=0)
Emitter-Base Breakdown Voltage (I
E
=–10µAdc,I
E
=0)
Collector-Base Cutoff Current (V
CB
=–45Vdc, I
E
=0)
Collector-Emitter Cutoff Current (V
CE
=–10Vdc, I
B
=0)
DC Current Gain
(1)
(V
CE
=–10Vdc, I
C
= –2.0mAdc)
Collector-Emitter Saturation Voltage
(I
C
= –100mAdc, I
B
=–10mAdc)
1. Pulse Test: Pulse Width < 300
µs,
D.C. < 2%.
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C)
DEVICE MARKING
Marking Symbol
ARX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N2–1/1
ETL [ E-TECH ELECTRONICS LTD ]
