NPN General Purpose Amplifier
Transistors Surface Mount
COLLECTOR
3
MSD601–RT1
MSD601–ST1
3
1
2
BASE
1
EMITTER
CASE
2
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
Collector Current–Peak
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
I
C(P)
Symbol
P
D
T
J
T
stg
Value
60
50
7.0
100
200
Max
200
150
–55 ~ +150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Unit
mW
°C
°C
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
h
FE2
V
CE(sat)
Min
50
60
7.0
—
—
210
290
90
—
318D–03, STYLE1
SC–59
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
Characteristic
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage (I
C
= 10
µAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage (I
E
= 10
µAdc,
I
C
= 0)
Collector-Base Cutoff Current (V
CB
= 45 Vdc, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 10 Vdc, I
B
= 0)
DC Current Gain
(1)
(V
CE
= 10 Vdc, I
C
= 2.0 mAdc)
MSD601-RT1
MSD601-ST1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Max
—
—
—
0.1
100
340
460
—
0.5
Vdc
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
—
(V
CE
= 2.0 Vdc, I
C
= 100 mAdc)
Collector-Emitter Saturation Voltage (I
C
= 100 mAdc, I
B
= 10 mAdc)
1. Pulse Test: Pulse Width < 300
µs,
D.C. < 2%.
DEVICE MARKING
Marking Symbol
YR
X
MSD601–RT1
YS
X
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N6–1/1
ETL [ E-TECH ELECTRONICS LTD ]
