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MUN2134RT1 参数 Datasheet PDF下载

MUN2134RT1图片预览
型号: MUN2134RT1
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管 [Bias Resistor Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 282 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2111RT1
P
D
, POWER DISSIPATION (MILLIWATTS)
250
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
=10
T
A
= –25°C
200
25°C
150
0.1
75°C
100
50
R
θJA
= 625°C/W
0
–50
0
50
10
150
0.01
0
20
40
60
80
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
h
FE
, DC CURRENT GAIN (NORMALIZED)
I
C
, COLLECTOR CURRENT (mA)
Figure 2. V
CE(sat)
versus I
C
1000
V
CE
= 10 V
4
C ob , CAPACITANCE (pF)
f = 1 MHz
l
E
= 0 V
3
T
A
= 25°C
T
A
=75°C
25°C
100
–25°C
2
1
10
1
10
100
0
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
75°C
25°C
100
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
V
O
= 0.2 V
10
T
A
= –25°C
1
10
T
A
= –25°C
25°C
75°C
0.1
1
0.01
0.001
0
1
2
3
4
5
6
V
O
= 5 V
0.1
7
8
9
10
0
10
20
30
40
50
V
in
, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P1–4/7