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MUN2133RT1 参数 Datasheet PDF下载

MUN2133RT1图片预览
型号: MUN2133RT1
PDF下载: 下载PDF文件 查看货源
内容描述: 偏置电阻晶体管 [Bias Resistor Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 282 K
品牌: ETL [ E-TECH ELECTRONICS LTD ]
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MUN2111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2113RT1
1
h
FE
, DC CURRENT GAIN (NORMALIZED)
V
CE( sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
I
C
/I
B
=10
T
A
=75°C
25°C
–25°C
100
T
A
= –25°C
25°C
0.1
75°C
0.01
0
10
20
30
40
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 12. V
CE(sat)
versus I
C
1
100
Figure 13. DC Current Gain
C ob , CAPACITANCE (pF)
0.8
l
E
= 0 V
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
f = 1 MHz
T
A
= 75°C
10
25°C
–25°C
0.6
1
0.4
0.1
0.2
0.01
V
O
= 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0
0
10
20
30
40
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
in
, INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
=–25°C
25°C
10
75°C
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
P1–6/7