Silicon Tuning Diode
These devices are designed in the popular PLASTIC PACK-
AGE for high volumerequirements of FM Radio and TV tuning and
AFC, general frequency control andtuning applications.They pro-
vide solid–state reliability in replacement of mechanical tuning
methods. Also available in Surface Mount Package up to 33pF.
•
High Q
•
Controlled and Uniform Tuning Ratio
•
Standard Capacitance Tolerance
—10%
•
Complete Typical Design Curves
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
3
1
2
CASE
318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
M V 2 1 X X MMBV21XXLT1 Unit
30
200
280
2.8
+150
–55 to +150
225
1.8
Vdc
mAdc
mW
mW/°C
°C
°C
T
J
T
stg
DEVICE MARKING
MMBV2101LT1=M4G
MMBV2103LT1=4H
MMBV2105LT1=4U
MMBV2107LT1=4W
MMBV2108LT1=4X
MMBV2109LT1=4J
Symbol
V
(BR)R
I
R
T
CC
Min
30
—
—
Typ
—
—
280
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=1.0µAdc)
Reverse Voltage Leakage Current
(V
R
=25Vdc,T
A
=25°C)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
I6–1/3
ETL [ E-TECH ELECTRONICS LTD ]
