Silicon Tuning Diode
This device is designed in the surface Mount package for general frequency
control and tuning applications.It provides solid-state reliability in replacement of
mechanical tuning methods.
•
High Q with Guaranteed Minimum Values at VHF Frequencies
• Controlled and Uniform Tuning Ratio
• Available in Surface Mount Package
MMBV409LT1
MV409
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
3
CATHODE
1
ANODE
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MAXIMUM RATINGS(EACH DIODE)
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
M B V 4 0 9 MMBV409LT1
20
200
280
2.8
20
200
225
1.8
+125
–55 to +150
Unit
Vdc
mAdc
mW
mW/°C
°C
°C
DEVICE MARKING
MMBV409LT1=X5,MV409=MV409
ELECTRICAL CHARACTERISTICS(T
A
=25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10µAdc)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Diode Capacitance Temperature Coefficient
Symbol
V
(BR)R
I
Min
20
—
—
Typ
—
—
300
Max
—
0.1
—
Unit
Vdc
µAdc
ppm/°C
R
T
CC
Device Type
C
T
Diode Capacitance
V
R
=3.0Vdc,f=1.0MHz
pF
Min
Nom
29
Q,Figure of Merit C
R
,Capacitance Ratio
C
3
/ C
8
V
R
=3.0Vdc
f=1.0MHz(1)
f=50MHz
Min
200
Max
32
Min
1.5
Max
1.9
MMBV409LT1,MV409
26
1. C
R
is the ratio of C
t
measured at 3 Vdc divided by C
t
measured at 8 vdc
I2–1/2
ETL [ E-TECH ELECTRONICS LTD ]
