欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM562081 参数 Datasheet PDF下载

EM562081图片预览
型号: EM562081
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×8低功耗SRAM [256K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 115 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM562081的Datasheet PDF文件第1页浏览型号EM562081的Datasheet PDF文件第2页浏览型号EM562081的Datasheet PDF文件第3页浏览型号EM562081的Datasheet PDF文件第4页浏览型号EM562081的Datasheet PDF文件第6页浏览型号EM562081的Datasheet PDF文件第7页浏览型号EM562081的Datasheet PDF文件第8页浏览型号EM562081的Datasheet PDF文件第9页  
EtronTech  
EM562081  
AC Characteristics and Operating Conditions (Ta = -40  
°C to 85  
°C, V  
= 2.7V to 3.6V)  
DD  
Read Cycle  
EM562081  
-85 -70  
Min Max Min Max  
Symbol  
Parameter  
Unit  
t
Read cycle time  
85  
-
-
70  
-
-
RC  
t
Address access time  
85  
85  
85  
45  
-
70  
70  
70  
35  
-
AA  
t
Chip Enable (CE1#) Access Time  
Chip Enable (CE2) Access Time  
Output enable access time  
-
-
CO1  
t
-
-
CO2  
t
-
-
OE  
ns  
t
Chip Enable Low to Output in Low-Z  
Output enable Low to Output in Low-Z  
Chip Enable High to Output in High-Z  
Output Enable High to Output in High-Z  
Output Data Hold Time  
10  
3
-
10  
3
-
LZ  
t
-
-
OLZ  
t
35  
35  
-
25  
25  
-
HZ  
t
-
-
OHZ  
t
10  
10  
OH  
Write Cycle  
EM562081  
-85 -70  
Min Max Min Max  
Symbol  
Parameter  
Unit  
t
Write cycle time  
85  
55  
70  
0
-
-
70  
55  
60  
0
-
-
WC  
t
Write pulse width  
WP  
t
Chip Enable to end of write  
Address setup time  
Write Recovery time  
WE# Low to Output in High-Z  
WE# High to Output in Low-Z  
Data Setup Time  
-
-
CW  
t
-
-
AS  
ns  
t
0
-
0
-
WR  
t
-
35  
-
-
30  
-
WHZ  
t
5
5
OW  
t
35  
0
-
30  
0
-
DS  
t
Data Hold Time  
-
-
DH  
AC Test Condition  
Output load: 50pF + one TTL gate  
Input pulse level: 0.4V, 2.4V  
Timing measurements: 0.5 x VDD  
tR, tF: 5ns  
·
·
·
·
Preliminary  
5
Rev 1.0  
July 2001