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EM564081BA-85E 参数 Datasheet PDF下载

EM564081BA-85E图片预览
型号: EM564081BA-85E
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8低功耗SRAM [512K x 8 Low Power SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 291 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Operating Mode
Mode
Read
Write
Output Deselect
Standby
X
L
X
X
CE1# CE2
L
L
L
H
H
H
H
X
OE# WE#
L
X
H
X
H
L
H
X
High-Z
DQ0~DQ7
DOUT
DIN
High-Z
EM564081
Note: X = don't care. H=logic high. L=logic low.
Absolute Maximum Ratings
Supply voltage, VDD
Input voltages, VIN
Input and output voltages, VI/O
Operating temperature, TOPR
Storage temperature, TSTRG
Soldering Temperature (10s), TSOLDER
Power dissipation, PD
-0.3 to +4.6V
-0.3 to +4.6V
-0.5 to VDD
+0.5V
-40 to +85°C
-55 to +150°C
260°C
0.6 W
DC Recommended Operating Conditions (Ta=-40°C to 85°C)
Symbol
VDD
VIH
VIL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
2.3
2.2
-0.3
(2)
Typ
Max
3.6
VDD + 0.3
0.6
3.6
(1)
Unit
V
V
V
V
VDR
Data Retention Supply Voltage
Note:
(1) Overshoot : VDD +2.0V in case of pulse width
20ns
(2) Undershoot : -2.0V in case of pulse width
20ns
1.0
Preliminary
3
Rev 0.7
January 2001