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EM567169BC-65 参数 Datasheet PDF下载

EM567169BC-65图片预览
型号: EM567169BC-65
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16伪SRAM [2M x 16 Pseudo SRAM]
分类和应用: 静态存储器
文件页数/大小: 14 页 / 129 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
DC Characteristics
Symbol
ILI
Parameter
Input Leakage
Current
Output Leakage
Current
Test Conditions
VIN = VSS to VCC
VIO = VSS to VCC
CE1# = VIH, CE2 = VIL or
OE# = VIH or WE# = VIL
Cycle time = Min., 100% duty, 70ns/85ns
Operating Current
I = 0mA, CE1# = VIL, CE2 =
@ Min Cycle Time IO
VIH, VIN = VIH or VIL
60ns/65ns
CE1# = VCC – 0.2V and
CE2 = VCC – 0.2V,
Other inputs = VSS ~ VCC
ISBD
VOL
VOH
Deep Power Down
(0Mb refresh)
Output Low
Voltage
Output High
Voltage
CE1#
0.2V and CE2
0.2V, Other inputs =
VSS ~ VCC
IOL = 2.1mA
IOH = -1.0mA
EM567169BC
Min.
-1
Max.
1
Unit
µA
ILO
-1
1
µA
35
45
mA
ICC1
ISB1
Standby Current
(CMOS)
100
µA
2.4
10
0.4
µA
V
V
Capacitance (Ta = 25°C; f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
CIN
COUT
Min
Typ
Max
8
10
Unit
pF
pF
Test Conditions
VIN = GND
VOUT = GND
Notes:
These parameters are sampled and not 100% tested.
5
Rev 0.6
Apr. 2004