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EM638165TS-10 参数 Datasheet PDF下载

EM638165TS-10图片预览
型号: EM638165TS-10
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mega ×16同步DRAM (SDRAM)的 [4Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 71 页 / 1058 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Features
Fast access time from clock: 5/6/6/6/7 ns
Fast clock rate: 166/143/133/125/100 MHz
Fully synchronous operation
Internal pipelined architecture
1M word x 16-bit x 4-bank
Programmable Mode registers
- CAS# Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop function
Auto Refresh and Self Refresh
4096 refresh cycles/64ms
CKE power down mode
Single +3.3V
±
0.3V power supply
Interface: LVTTL
54-pin 400 mil plastic TSOP II package
EM638165
Preliminary (Rev 0.6, 2/2001)
4Mega x 16 Synchronous DRAM (SDRAM)
Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
LDQM
WE#
CAS#
RAS#
CS#
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC/RFU
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
Overview
The EM638165 SDRAM is a high-speed CMOS
synchronous DRAM containing 64 Mbits. It is internally
configured as 4 Banks of 1M word x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Read and write
accesses to the SDRAM are burst oriented; accesses
start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a
Read or Write command.
The EM638165 provides for programmable Read
or Write burst lengths of 1, 2, 4, 8, or full page, with a
burst termination option. An auto precharge function
may be enabled to provide a self-timed row precharge
that is initiated at the end of the burst sequence. The
refresh functions, either Auto or Self Refresh are easy
to use.
By having a programmable mode register, the
system can choose the most suitable modes to
maximize its performance. These devices are well
suited for applications requiring high memory
bandwidth and particularly well suited to high
performance PC applications.
Key Specifications
EM638165
-
6/7/7.5/8/10
6/7/7.5/8/10 ns
5/5.4/5.4/6/7 ns
42/45/45/48/50 ns
60/63/68/70/80 ns
t
CK3
t
AC3
t
RAS
t
RC
Clock Cycle time(min.)
Access time from CLK(max.)
Row Active time(max.)
Row Cycle time(min.)
Ordering Information
Part Number
EM638165TS-6
EM638165TS-7
EM638165TS-7.5
EM638165TS-8
EM638165TS-10
Frequency
166MHz
143MHz
133MHz
125MHz
100MHz
Package
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.