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EM639165TS-6LG 参数 Datasheet PDF下载

EM639165TS-6LG图片预览
型号: EM639165TS-6LG
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega ×16同步DRAM (SDRAM)的 [8Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 1303 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
WE#
Input
LDQM,
UDQM
DQ0-DQ15
NC/RFU
V
DDQ
Input
EM639165
Write Enable:
The WE# signal defines the operation commands in conjunction
with the RAS# and CAS# signals and is latched at the positive edges of CLK.
The WE# input is used to select the BankActivate or Precharge command and
Read or Write command.
Data Input/Output Mask:
Controls output buffers in read mode and masks
Input data in write mode.
Input /
Output
-
Supply
Data I/O:
The DQ0-15 input and output data are synchronized with the positive
edges of CLK. The I/Os are maskable during Reads and Writes.
No Connect:
These pins should be left unconnected.
DQ Power:
Provide isolated power to DQs for improved noise immunity.
( 3.3V± 0.3V )
V
SSQ
Supply
DQ Ground:
Provide isolated ground to DQs for improved noise immunity.
(0V)
Power Supply:
+3.3V
±
0.3V
Ground
V
DD
V
SS
Supply
Supply
4
Rev 1.6 Feb. 2007