欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM639165 参数 Datasheet PDF下载

EM639165图片预览
型号: EM639165
PDF下载: 下载PDF文件 查看货源
内容描述: 8Mega X 16位SDRAM [8Mega x 16bits SDRAM]
分类和应用: 动态存储器
文件页数/大小: 48 页 / 655 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM639165的Datasheet PDF文件第2页浏览型号EM639165的Datasheet PDF文件第3页浏览型号EM639165的Datasheet PDF文件第4页浏览型号EM639165的Datasheet PDF文件第5页浏览型号EM639165的Datasheet PDF文件第6页浏览型号EM639165的Datasheet PDF文件第7页浏览型号EM639165的Datasheet PDF文件第8页浏览型号EM639165的Datasheet PDF文件第9页  
EtronTech
Features
Single 3.3
±
0.3V power supply
Fast clock rate
-
PC133: 133 MHz (CL3)
-
PC100: 100 MHz (CL2)
Fully synchronous operation referenced to clock
rising edge
4-bank operation controlled by BA0, BA1 (Bank
Address)
Programmable Mode registers
- /CAS Latency: 2 or 3
- Burst Length: 1, 2, 4, 8 or full page
- Burst Type: interleaved or linear burst
Byte Control – DQML and DQMU
Random column access
Auto precharge / All banks precharge controlled
by A10
Auto and self-refresh
Self-refresh mode: standard and low power
4096 refresh cycles/64ms
Interface: LVTTL
54-pin 400 mil plastic TSOP II package
EM639165
8Mega x 16bits SDRAM
Preliminary (Rev 1.0, 2/2001)
Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
DQML
/WE
/CAS
/RAS
/CS
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
DQMU
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
VSS
Ordering Information
Part Number
Speed
Grade
PC133/CL3
PC133/CL3
PC100/CL2
PC100/CL2
Self refresh
current (Max.)
2 mA
800
µA
2 mA
800
µA
Key Specifications
EM639165
-
75/8
10/10 ns
7.5/8 ns
6/6 ns
5.4/6 ns
45/48 ns
67.5/70 ns
EM639165TS-75
EM639165TS-75L
EM639165TS-8
EM639165TS-8L
t
CK2
t
CK3
t
AC2
t
AC3
t
RAS
t
RC
Clock Cycle time (min., CL=2)
Clock Cycle time (min., CL=3)
Access time (max., CL=2)
Access time (max., CL=3)
Row Active time (max.)
Row Cycle time(min.)
Overview
EM639165 is a high-speed Synchronous Dynamic
Random Access Memory (SDRAM), organized as 4
banks x 2,097,152 words x 16 bits. All inputs and
outputs are referenced to the rising edge of CLK.
It achieves very high-speed data rates up to
133MHz, and is suitable for main memories or graphic
memories in computer systems. For handheld device
application, we also provide a low power option, with
self-refresh current under 800
µA.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.