欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM63A165 参数 Datasheet PDF下载

EM63A165图片预览
型号: EM63A165
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mega ×16同步DRAM (SDRAM)的 [16Mega x 16 Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器
文件页数/大小: 73 页 / 1390 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
 浏览型号EM63A165的Datasheet PDF文件第2页浏览型号EM63A165的Datasheet PDF文件第3页浏览型号EM63A165的Datasheet PDF文件第4页浏览型号EM63A165的Datasheet PDF文件第5页浏览型号EM63A165的Datasheet PDF文件第6页浏览型号EM63A165的Datasheet PDF文件第7页浏览型号EM63A165的Datasheet PDF文件第8页浏览型号EM63A165的Datasheet PDF文件第9页  
EtronTech
Features
Fast access time from clock: 5/5.4 ns
Fast clock rate: 166/143 MHz
Fully synchronous operation
Internal pipelined architecture
4M word x 16-bit x 4-bank
Programmable Mode registers
- CAS# Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop function
Auto Refresh and Self Refresh
8192 refresh cycles/64ms
CKE power down mode
Single +3.3V power supply
Interface: LVTTL
54-pin 400 mil plastic TSOP II Lead-free package
EM63A165
(Rev 1.1, Apr., 2007)
16Mega x 16 Synchronous DRAM (SDRAM)
Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
VDD
DQML
/WE
/CAS
/RAS
/CS
BA0
BA1
A10(AP)
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
VSS
NC
DQMU
CLK
CKE
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Overview
The EM63A165 SDRAM is a high-speed CMOS
synchronous DRAM containing 256 Mbits. It is internally
configured as 4 Banks of 2M word x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CLK). Read and write
accesses to the SDRAM are burst oriented; accesses
start at a selected location and continue for a
programmed number of locations in a programmed
sequence. Accesses begin with the registration of a
BankActivate command which is then followed by a Read
or Write command.
The EM63A165 provides for programmable Read
or Write burst lengths of 1, 2, 4, 8, or full page, with a
burst termination option. An auto precharge function may
be enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use.
By having a programmable mode register, the
system can choose the most suitable modes to maximize
its performance. These devices are well suited for
applications requiring high memory bandwidth and
particularly well suited to high performance PC
applications.
Key Specifications
EM63A165
-
6/7
6/7 ns
5/5.4 ns
42/45 ns
60/63 ns
t
CK3
t
AC3
t
RAS
t
RC
Clock Cycle time(min.)
Access time from CLK(max.)
Row Active time(min.)
Row Cycle time(min.)
Ordering Information
Part Number
EM63A165TS-6G
EM63A165TS-7G
Frequency Package
166MHz
143MHz
TSOP II
TSOP II
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.