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EM658160TS-8 参数 Datasheet PDF下载

EM658160TS-8图片预览
型号: EM658160TS-8
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ×16的DDR同步DRAM (SDRAM)的 [4M x 16 DDR Synchronous DRAM (SDRAM)]
分类和应用: 内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 26 页 / 158 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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Etr onTech
Etron Confidential
EM658160
(Rev. 1.1 Jan./2002)
4M x 16 DDR Synchronous DRAM (SDRAM)
Features
Fast clock rate: 300/285/250/200/166/143/125MHz
Differential Clock CK & /CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 1M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- /CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
Individual byte write mask control
DM Write Latency = 0
Auto Refresh and Self Refresh
4096 refresh cycles / 64ms
Precharge & active power down
Power supplies: V
DD
= 3.3V
±
0.3V
V
DDQ
= 2.5V
±
0.2V
Interface: SSTL_2 I/O Interface
Package: 66 Pin TSOP II, 0.65mm pin pitch
Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BS0
BS1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
Ordering Information
Part Number
EM658160TS-3.3
EM658160TS-3.5
EM658160TS-4
EM658160TS-5
EM658160TS-6
EM658160TS-7
EM658160TS-8
Frequency
300MHz
285MHz
250MHz
200MHz
166MHz
143MHz
125MHz
Package
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
TSOP II
Overview
The EM658160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 64
Mbits. It is internally configured as a quad 1M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal, CK).
Data outputs occur at both rising edges of CK and /CK.
Read and write accesses to the SDRAM are burst
oriented; accesses start at a selected location and
continue for a programmed number of locations in a
programmed sequence. Accesses begin with the
registration of a BankActivate command which is then
followed by a Read or Write command. The EM658160
provides programmable Read or Write burst lengths of 2,
4, 8, full page.
An auto precharge function may be enabled to
provide a self-timed row precharge that is initiated at the
end of the burst sequence. The refresh functions, either
Auto or Self Refresh are easy to use. In addition,
EM658160 features programmable DLL option. By
having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to
high performance main memory and graphics
applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.