EtronTech
Features
Clock rate: 133/125/100 MHz
Fully synchronous operation
Internal pipelined architecture
Four internal banks (1M x 32bit x 4bank)
Programmable Mode
- CAS# Latency: 1, 2 & 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential & Interleave
- Burst-Read-Single-Write
- Driving Strenght : Full & Half
- PASR (Partial Array Self Refresh)
- TCSR (Temperature Compensated Self Refresh)
•
Burst stop function
•
Individual byte controlled by DQM0-3
•
Auto Refresh and Self Refresh
•
•
•
•
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EM66932A
Preliminary (Rev 0.1 June/2003)
•
4096 refresh cycles/64ms
•
Single 3.0V, or 3.3V power supply
•
Interface: LVTTL
•
Package : 90 ball-FBGA, 11x13mm, Lead Free
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
Ordering Information
Part Number
EM66932ABG-7.5G
EM66932ABG-8G
EM66932ABG-1H/LG
Frequency
133MHz
125MHz
100MHz
Package
11x13 BGA
11x13 BGA
11x13 BGA
Pin Assignment : Top View
1
A
B
C
D
E
F
G
H
J
K
L
M
2
3
4
5
6
7
8
9
DQ26
DQ28
VSSQ
VSSQ
VDDQ
VSS
A4
A7
CLK
DQM1
VDDQ
VSSQ
VSSQ
DQ11
DQ13
DQ24
VDDQ
DQ27
DQ29
DQ31
DQM3
A5
A8
CKE
NC
DQ8
DQ10
DQ12
VDDQ
DQ15
VSS
VSSQ
DQ25
DQ30
NC
A3
A6
NC
A9
NC
VSS
DQ9
DQ14
VSSQ
VSS
VDD
VDDQ
DQ22
DQ17
NC
A2
A10
NC
BA0
CAS#
VDD
DQ6
DQ1
VDDQ
VDD
DQ23
VSSQ
DQ20
DQ18
DQ16
DQM2
A0
BA1
CS#
WE#
DQ7
DQ5
DQ3
VSSQ
DQ0
DQ21
DQ19
VDDQ
VDD1Q
VSSQ
VDD
A1
A11
RAS#
DQM0
VSSQ
VDDQ
VDDQ
DQ4
DQ2
N
P
R
Etron Technology, Inc.
No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice.
ETRON [ ETRON TECHNOLOGY, INC. ]
