EtronTech
Etron Confidential
EM68916DVAA
Advanced (Rev. 1.0 Apr. /2009)
Table 1. Ordering Information
Part Number
EM68916DVAA-6H
EM68916DVAA-75H
Clock
Frequency
166MHz
133MHz
Data Rate
IDD6 Package
8M x 16 Mobile DDR Synchronous DRAM (SDRAM)
Features
Fast clock rate: 166/133 MHz
Differential Clock CK &
CK
Bi-directional DQS
Four internal banks, 2M x 16-bit for each bank
Edge-aligned with read data, centered in write
data
•
Programmable Mode and Extended Mode Registers
-
CAS
Latency: 2, or 3
- Burst length: 2, 4, or 8
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
•
Individual byte writes mask control
•
DM Write Latency = 0
•
Precharge Standby Current = 100
µA
•
Self Refresh Current = 200
µA
•
Deep power-down Current = 10
µA
max. at 85
℃
•
Auto Refresh and Self Refresh
•
4096 refresh cycles / 64ms
•
No DLL (Delay Lock Loop), to reduce power; CK to
DQS is not synchronized.
•
Power supplies: V
DD
& V
DDQ
= +1.8V+0.15V/-0.1V
•
Interface: LVCMOS
•
Ambient Temperature T
A
= -25 ~ 85
℃
,
•
60-ball 8mm x 10mm VFBGA package
- Pb free and Halogen free
•
•
•
•
•
333Mbps/pin 200
µA
VFBGA
266Mbps/pin 200
µA
VFBGA
VA: indicates VFBGA package
A: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
1
A
B
C
D
E
F
G
H
J
K
VSS
2
DQ15
3
VSSQ
…
7
VDDQ
8
DQ0
9
VDD
VDDQ
DQ13
DQ14
DQ1
DQ2
VSSQ
VSSQ
DQ11
DQ12
DQ3
DQ4
VDDQ
VDDQ
DQ9
DQ10
DQ5
DQ6
VSSQ
VSSQ
UDQS
DQ8
DQ7
LDQS
VDDQ
VSS
UDM
NC
NC
LDM
VDD
CKE
CK
CK
WE
CAS
RAS
A9
A11
NC
CS
BA0
BA1
A6
A7
A8
A10/AP
A0
A1
VSS
A4
A5
A2
A3
VDD
Overview
The EM68916D is 134,217,728 bits of double data
rate synchronous DRAM organized as 4 banks of
2,097,152 words by 16 bits. The synchronous
operation with Data Strobe allows extremely high
performance. EM68916D is applied to reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies, programmable burst length and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
ETRON [ ETRON TECHNOLOGY, INC. ]
