EtronTech
Etron Confidential
Features
Fast clock rate: 166/133 MHz
Differential Clock CK &
CK
Bi-directional DQS
Four internal banks, 1M x 32-bit for each bank
Edge-aligned with read data, centered in write data
Programmable Mode and Extended Mode Registers
- CAS Latency: 2, or 3
- Burst length: 2, 4, or 8
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
•
Individual byte writes mask control
•
DM Write Latency = 0
•
Precharge Standby Current = 100
µA
•
Self Refresh Current = 200
µA
•
Deep power-down Current = 10
µA
max. at 85
℃
•
Auto Refresh and Self Refresh
•
4096 refresh cycles / 64ms
•
No DLL (Delay Lock Loop), to reduce power; CK to
DQS is not synchronized.
•
Power supplies: V
DD
& V
DDQ
= +1.8V+0.15V/-0.1V
•
Interface: LVCMOS
•
Ambient Temperature T
A
= -25 ~ 85
℃
,
•
90-ball 8mm x 13mm VFBGA package
- Pb and Halogen Free
•
•
•
•
•
•
Part Number
EM68932DVKB-6H
EM68932DVKB-75H
EM68932DVKB
Advanced (Rev. 1.0 Aug. /2009)
Table 1. Ordering Information
Clock Frequency
166MHz
133MHz
IDD6 Package
200
µA
VFBGA
200
µA
VFBGA
4M x 32 Mobile DDR Synchronous DRAM (SDRAM)
VK: indicates VFBGA package
B: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
VSS
VDDQ
.
VSSQ
VDDQ
VSSQ
VDD
CKE
A9
A6
A4
VSSQ
VDDQ
VSSQ
VDDQ
VSS
2
DQ31
DQ29
DQ27
DQ25
DQS3
DM3
CK
A11
A7
DM1
DQS1
DQ9
DQ11
DQ13
DQ15
3
VSSQ
DQ30
DQ28
DQ26
DQ24
NC
CK
NC
A8
A5
DQ8
DQ10
DQ12
DQ14
VSSQ
…
7
VDDQ
DQ17
.
DQ19
DQ21
DQ23
NC
WE
CS
A10/AP
A2
DQ7
DQ5
DQ3
DQ1
VDDQ
8
DQ16
DQ18
DQ20
DQ22
DQS2
DM2
CAS
BA0
A0
DM0
DQS0
DQ6
DQ4
DQ2
DQ0
9
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VSS
RAS
BA1
A1
A3
VDDQ
VSSQ
VDDQ
VSSQ
VDD
Overview
The EM68932D is 134,217,728 bits of double data
rate synchronous DRAM organized as 4 banks of
1,048,576 words by 32 bits. The synchronous
operation with Data Strobe allows extremely high
performance. EM68932D is applied to reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies, programmable burst length and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
ETRON [ ETRON TECHNOLOGY, INC. ]
