EtronTech
Etron Confidential
Features
Fast clock rate: 166/133 MHz
Differential Clock CK &
CK
Bi-directional DQS
Four internal banks, 8M x 16-bit for each bank
Edge-aligned with read data, centered in write data
Programmable Mode and Extended Mode Registers
-
CAS
Latency: 2, or 3
- Burst length: 2, 4, 8, or 16
- Burst Type: Sequential & Interleaved
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self
Refresh)
- DS (Drive Strength)
•
Individual byte writes mask control
•
DM Write Latency = 0
•
Precharge Standby Current = 300
µA
•
Self Refresh Current = 700
µA
•
Deep power-down Current = 10
µA
max. at 85
℃
•
Auto Refresh and Self Refresh
•
8192 refresh cycles / 64ms
•
No DLL (Delay Lock Loop), to reduce power; CK to
DQS is not synchronized.
•
Power supplies: V
DD
& V
DDQ
= +1.8V+0.15V/-0.1V
•
Interface: LVCMOS
•
Ambient Temperature T
A
= -25 ~ 85
℃
,
•
60-ball 8mm x 10mm VFBGA package
- Pb free and Halogen free
•
•
•
•
•
•
EM68B16DVAA
Advanced (Rev. 1.0 Mar. /2009)
Table 1. Ordering Information
Part Number
EM68B16DVAA-6H
EM68B16DVAA-75H
Clock
Frequency
166MHz
133MHz
Data Rate
IDD6 Package
32M x 16 Mobile DDR Synchronous DRAM (SDRAM)
333Mbps/pin 700
µA
VFBGA
266Mbps/pin 700
µA
VFBGA
VA: indicates VFBGA package
A: indicates Generation Code
H: indicates Pb and Halogen Free for VFBGA Package
Figure 1. Ball Assignment (Top View)
1
A
B
C
D
E
F
G
H
J
K
VSS
VDDQ
.
VSSQ
VDDQ
VSSQ
VSS
CKE
A9
A6
VSS
2
DQ15
DQ13
DQ11
DQ9
UDQS
UDM
CK
A11
A7
A4
3
VSSQ
DQ14
DQ12
DQ10
DQ8
NC
CK
A12
A8
A5
…
7
VDDQ
DQ1
.
DQ3
DQ5
DQ7
NC
WE
CS
A10/AP
A2
8
DQ0
DQ2
DQ4
DQ6
LDQS
LDM
CAS
BA0
A0
A3
9
VDD
VSSQ
VDDQ
VSSQ
VDDQ
VDD
RAS
BA1
A1
VDD
Overview
The EM68B16D is 536,870,912 bits of double data
rate synchronous DRAM organized as 4 banks of
8,388,608 words by 16 bits. The synchronous
operation with Data Strobe allows extremely high
performance. EM68B16D is applied to reduce
leakage and refresh currents while achieving very
high speed. I/O transactions are possible on both
edges of the clock. The ranges of operating
frequencies, programmable burst length and
programmable latencies allow the device to be
useful for a variety of high performance memory
system applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
ETRON [ ETRON TECHNOLOGY, INC. ]
