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EM68C16CWQE-18IH 参数 Datasheet PDF下载

EM68C16CWQE-18IH图片预览
型号: EM68C16CWQE-18IH
PDF下载: 下载PDF文件 查看货源
内容描述: [64M x 16 bit DDRII Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 56 页 / 1005 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech  
EM68C16CWQE  
- EMR(2)  
The extended mode register (2) controls refresh related features. The default value of the extended mode  
register (2) is not defined, therefore the extended mode register (2) must be written after power-up for proper  
operation. The extended mode register(2) is written by asserting LOW on CS#, RAS#, CAS#, WE#, HIGH on  
BA1 and LOW on BA0, while controlling the states of address pins A0 ~ A12. The DDR2 SDRAM should be in  
all bank precharge with CKE already HIGH prior to writing into the extended mode register (2). The mode  
register set command cycle time (tMRD) must be satisfied to complete the write operation to the extended mode  
register (2). Mode register contents can be changed using the same command and clock cycle requirements  
during normal operation as long as all banks are in the precharge state.  
Table 7. Extended Mode Register EMR(2) Bitmap  
BA2 BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Field  
0*3  
1
0
0*1  
0*1  
SRF  
Extended Mode Register(2)  
A7  
0
High Temperature Self-Refresh Rate Enable  
Disable  
Enable *2  
1
NOTE 1: The rest bits in EMRS(2) are reserved for future use and all bits in EMRS(2) except A7, BA0 and BA1 must be  
programmed to 0 when setting the extended mode register(2) during initialization.  
NOTE 2: Due to the migration nature, user needs to ensure the DRAM part supports higher than 85Tcase temperature  
self-refresh entry. If the high temperature self-refresh mode is supported then controller can set the EMRS2[A7] bit to  
enable the self-refresh rate in case of higher than 85temperature self-refresh operation.  
NOTE 3: BA2 is reserved for future use and must be set to 0 when programming the MR.  
Etron Confidential  
11  
Rev. 1.0  
Jan. /2014