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EM6AA160TS 参数 Datasheet PDF下载

EM6AA160TS图片预览
型号: EM6AA160TS
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×16位DDR同步DRAM ( SDRAM ) [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 51 页 / 401 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Etron Confidential
EM6AA160TS
(Rev. 0.7 July/ 2008)
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Features
Fast clock rate: 250/200MHz
Differential Clock CK &
CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 4M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
Individual byte write mask control
DM Write Latency = 0
Auto Refresh and Self Refresh
8192 refresh cycles / 64ms
Precharge & active power down
Power supplies:
VDD = 2.5V
±
5%
VDDQ = 2.5V
±
5%
Interface: SSTL_2 I/O Interface
Package: 66 Pin TSOP II, 0.65mm pin pitch
-
Pb and Halogen free
Overview
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256
Mbits. It is internally configured as a quad 4M x 16
DRAM with a synchronous interface (all signals are
registered on the positive edge of the clock signal,
CK). Data outputs occur at both rising edges of CK
and
CK
.d Read and write accesses to the SDRAM
are burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Accesses
begin with the registration of a BankActivate
command which is then followed by a Read or Write
command. The EM6AA160 provides programmable
Read or Write burst lengths of 2, 4, or 8. An auto
precharge function may be enabled to provide a
self-timed row precharge that is initiated at the end
of the burst sequence. The refresh functions, either
Auto or Self Refresh are easy to use. In addition,
EM6AA160 features
programmable DLL option.
By having a programmable mode register and
extended mode register, the system can choose the
most suitable modes to maximize its performance.
These devices are well suited for applications
requiring high memory bandwidth, result in a device
particularly well suited to high performance main
memory and graphics applications.
Table 1. Ordering Information
Part Number
EM6AA160TS-4G
EM6AA160TS-5G
Clock Frequency
250MHz
200MHz
Data Rate
500Mbps/pin
400Mbps/pin
Power Supply
V
DD
2.5V V
DDQ
2.5V
V
DD
2.5V V
DDQ
2.5V
Package
TSOPII
TSOPII
TS : indicates TSOPII package
G: indicates
Pb and Halogen free
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.