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EM6AA160TS 参数 Datasheet PDF下载

EM6AA160TS图片预览
型号: EM6AA160TS
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×16位DDR同步DRAM ( SDRAM ) [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 51 页 / 401 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Extended Mode Register Set (EMRS)
EM6AA160TS
The Extended Mode Register Set stores the data for enabling or disabling DLL and selecting output driver
strength. The default value of the extended mode register is not defined, therefore must be written after power
up for proper operation. The extended mode register is written by asserting low on
CS
,
RAS
,
CAS
, and
WE
.
The state of A0 ~ A12, BA0 and BA1 is written in the mode register in the same cycle as
CS
,
RAS
,
CAS
, and
WE
going low. The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into
the extended mode register. A1 is used for setting driver strength to normal, or weak. Two clock cycles are
required to complete the write operation in the extended mode register. The mode register contents can be
changed using the same command and clock cycle requirements during operation as long as all banks are in
the idle state. A0 is used for DLL enable or disable. "High" on BA0 is used for EMRS. Refer to the table for
specific codes.
Table 10. Extended Mode Resistor Bitmap
BA1
0
BA0
1
A12
A11
A10
A9
A8
A7
A6
A5
RFU must be set to “0”
A4
A3
A2
A1
DS0
A0
DLL
BA0 Mode
0
MRS
1 EMRS
A1
0
1
Drive Strength
Normal
weak
A0
DLL
0
Enable
1 Disable
Etron Confidential
9
Rev. 0.7
July 2008