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EM6AA160TSA 参数 Datasheet PDF下载

EM6AA160TSA图片预览
型号: EM6AA160TSA
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×16位DDR同步DRAM ( SDRAM ) [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 54 页 / 431 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Table 12. Absolute Maximum Rating
Symbol
Item
Rating
EM6AA160TSA
Unit
V
IN
, V
OUT
V
DD
, V
DDQ
T
A
T
STG
T
SOLDER
P
D
Input, Output Voltage
Power Supply Voltage
Ambient Temperature
Storage Temperature
Soldering Temperature
Power Dissipation
- 0.5~ V
DDQ
+ 0.5
- 1~3.6
0~70
- 65~150
260
1
V
V
°C
°C
°C
W
I
OUT
Short Circuit Output Current
50
mA
Note1: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device.
Note2: These voltages are relative to Vss
Table 13. Recommended D.C. Operating Conditions
(T
A
= 0 ~ 70
°C)
Parameter
Symbol
Min.
Max.
Unit
Note
Power Supply Voltage
Power Supply Voltage (for I/O Buffer)
Input Reference Voltage
Input High Voltage (DC)
Input Low Voltage (DC)
Termination Voltage
Input Voltage Level, CK and
CK
inputs
Input Different Voltage, CK and
CK
inputs
Input leakage current
Output leakage current
Output High Voltage
Output Low Voltage
Note:
All voltages are referenced to V
SS
.
V
DD
V
DDQ
V
REF
2.375
2.375
0.49*V
DDQ
2.625
2.625
0.51* V
DDQ
V
V
V
V
V
V
V
V
µ
A
µ
A
V
IH
(DC) V
REF
+ 0.15 V
DDQ
+ 0.3
V
IL
(DC)
V
TT
V
IN
(DC)
V
ID
(DC)
I
I
I
OZ
V
OH
V
OL
-0.3
-0.3
-0.36
-2
-5
V
TT
+ 0.76
-
V
REF
– 0.15
V
DDQ
+ 0.3
V
DDQ
+ 0.6
2
5
-
V
TT
– 0.76
V
REF
- 0.04 V
REF
+ 0.04
V
V
I
OH
= -15.2 mA
I
OL
= +15.2 mA
Table 14. Capacitance
(VDD = 2.5V, f = 1MHz, T
A
= 25
°C)
Symbol
Parameter
Min.
Max.
Unit
C
IN1
C
IN2
Input Capacitance (CK,
CK
)
Input Capacitance (All other input-only pins)
2.5
2.5
3.5
3.5
pF
pF
C
I/O
DQ, DQS, DM Input/Output Capacitance
4.0
5.0
pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested
Etron Confidential
10
Rev. 1.2
May 2009