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EM6AA160TSA 参数 Datasheet PDF下载

EM6AA160TSA图片预览
型号: EM6AA160TSA
PDF下载: 下载PDF文件 查看货源
内容描述: 16M ×16位DDR同步DRAM ( SDRAM ) [16M x 16 bit DDR Synchronous DRAM (SDRAM)]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 54 页 / 431 K
品牌: ETRON [ ETRON TECHNOLOGY, INC. ]
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EtronTech
Operation Mode
EM6AA160TSA
Fully synchronous operations are performed to latch the commands at the positive edges of CK. Table 3
shows the truth table for the operation commands.
Table 3. Truth Table (Note (1), (2))
Command
BankActivate
BankPrecharge
PrechargeAll
Write
Write and AutoPrecharge
Read
Read and Autoprecharge
Mode Register Set
Extended MRS
No-Operation
Burst Stop
Device Deselect
AutoRefresh
SelfRefresh Entry
SelfRefresh Exit
State
CKE
n-1
CKE
n
UDM LDM BA
0,1
A
10
A
0-9, 11-12
CS RAS CAS
WE
Idle
(3)
Any
Any
Active
(3)
Active
(3)
Active
(3)
Active
(3)
Idle
Idle
Any
Active
(4)
Any
Idle
Idle
Idle
(SelfRefresh)
H
H
H
H
H
H
H
H
H
H
H
H
H
H
L
H
L
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
H
L
H
L
H
L
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
V
V
X
V
V
V
V
L
H
L
H
L
H
Row address
X
X
Column address
(A0 ~ A8)
Column address
(A0 ~ A8)
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
L
L
H
H
X
L
L
X
H
X
H
X
H
X
V
X
H
X
X
H
H
H
L
L
L
L
L
L
H
H
X
L
L
X
H
X
H
X
H
X
V
X
H
X
X
H
L
L
L
L
H
H
L
L
H
L
X
H
H
X
H
X
H
X
H
X
V
X
H
X
X
OP code
OP code
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
H
L
L
H
L
H
L
H
L
H
L
H
L
X
X
Precharge Power Down Mode
Entry
Precharge Power Down Mode
Exit
Active Power Down Mode
Entry
Active Power Down Mode
Exit
Data Input Mask Disable
Data Input Mask Enable(5)
Idle
Any
(PowerDown)
Active
Any
(PowerDown)
Active
Active
H
X
H
H
X
X
X
Note:
1. V=Valid data, X=Don't Care, L=Low level, H=High level
2. CKE
n
signal is input level when commands are provided.
CKE
n-1
signal is input level one clock cycle before the commands are provided.
3. These are states of bank designated by BA signal.
4. Device state is 2, 4, and 8 burst operation.
5. LDM and UDM can be enabled respectively.
Etron Confidential
5
Rev. 1.2
May 2009