EtronTech
Etron Confidential
Features
Fast clock rate: 250/200MHz
Differential Clock CK &
CK
Bi-directional DQS
DLL enable/disable by EMRS
Fully synchronous operation
Internal pipeline architecture
Four internal banks, 4M x 16-bit for each bank
Programmable Mode and Extended Mode registers
- CAS Latency: 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
•
Individual byte write mask control
•
DM Write Latency = 0
•
Auto Refresh and Self Refresh
•
8192 refresh cycles / 64ms
•
Precharge & active power down
•
Power supplies: V
DD &
V
DDQ
= 2.5V
±
5%
•
Interface: SSTL_2 I/O Interface
•
Package: 66 Pin TSOP II, 0.65mm pin pitch
-
Pb free and Halogen free
•
•
•
•
•
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EM6AA160TSA
Preliminary (Rev. 1.2 May. / 2009)
Table 1.Ordering Information
Clock
Data Rate Package
Frequency
EM6AA160TSA-4G 250MHz 500Mbps/pin TSOPII
EM6AA160TSA-5G 200MHz 400Mbps/pin TSOPII
Part Number
TS: indicates TSOP II package
G: indicates
Pb free and Halogen free
A: indicates Generation Code
16M x 16 bit DDR Synchronous DRAM (SDRAM)
Figure 1. Pin Assignment (Top View)
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
Overview
The EM6AA160 SDRAM is a high-speed CMOS
double data rate synchronous DRAM containing 256 Mbits.
It is internally configured as a quad 4M x 16 DRAM with a
synchronous interface (all signals are registered on the
positive edge of the clock signal, CK). Data outputs occur
at both rising edges of CK and
CK
.d Read and write
accesses to the SDRAM are burst oriented; accesses start
at a selected location and continue for a programmed
number of locations in a programmed sequence. Accesses
begin with the registration of a BankActivate command
which is then followed by a Read or Write command. The
EM6AA160 provides programmable Read or Write burst
lengths of 2, 4, or 8. An auto precharge function may be
enabled to provide a self-timed row precharge that is
initiated at the end of the burst sequence. The refresh
functions, either Auto or Self Refresh are easy to use. In
addition, EM6AA160 features programmable DLL option.
By having a programmable mode register and extended
mode register, the system can choose the most suitable
modes to maximize its performance. These devices are
well suited for applications requiring high memory
bandwidth, result in a device particularly well suited to high
performance main memory and graphics applications.
Etron Technology, Inc.
No. 6, Technology Rd. V, Hsinchu Science Park, Hsinchu, Taiwan 30078, R.O.C.
TEL: (886)-3-5782345
FAX: (886)-3-5778671
Etron Technology, Inc. reserves the right to change products or specification without notice.
ETRON [ ETRON TECHNOLOGY, INC. ]
