Eudyna GaN-HEMT 10W
Preliminary
FEATURES
・High
Voltage Operation : V
DS
=50V
・High
Gain: 28.5dB(typ.) at P
out
=22dBm(Avg.)
・Broad
Frequency Range : 2110 to 2170MHz
・Proven
Reliability
・Small
and Low Cost Metal Base Package
EMC21L1004GN
High Voltage - High Power GaN-HEMT
Power Amplifier Module
DESCRIPTION
The EMC21L1004GN is a high-gain and wide-band 2-stage HIC
amplifier module with 50V operation.
This module is targeted for high voltage, low current operation in digitally
modulated base station. This product is ideally suited not only for W-
CDMA base station amplifiers but also other HPA while offering ease for
use.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Rating
Item
Symbol
V
dd1,2
V
gg1,2
P
in
T
stg
T
op
DC Input Voltage (Drain)
DC Input Voltage (Gate)
Input Power
Storage Temperature
Operating Case Temperature
RECOMMENDED OPERATING CONDITION (Case Temperature Tc= 25
o
C)
Condition
Item
Symbol
DC Input Voltage (Drain)
DC Input Voltage (Gate)
Input Power
ELECTRICAL CHARACTERISTICS (Case Temperature Tc= 25 C)
Item
Symbol
f
G
L
d-Ga
VSWRi
Idd(DC
)
P
e
r
im
l
V
dd1,2
V
gg1,2
P
in
I
gg(DC)
IM
3
I
dd
a
n
i
-
0 to +52
-7 to 0
+20
-40 to +100
-20 to +85
y
r
o
Unit
V
V
dBm
o
C
o
C
Unit
V
V
dBm
50
-3
<10
Condition
Limit
Min. Typ. Max.
2.11
26.0
-
-
-
-
-
-
-
28.5
0.2
1.5:1
210
6.0
-47.0
200
2.17
31.0
0.5
2.5:1
250
15.0
-45.0
250
Unit
GHz
dB
dBp_p
-
mA
mA
dBc
mA
Frequency
Linear Gain
Gain Deviation
Input VSWR
DC Input Current
DC Input Current
3rd Order Intermodulation
Distortion Ratio
DC Input Current
V
dd1,2
=50V
V
gg1,2
=-3.0V
P
in
=-10dBm
V
dd1,2
=50V
V
gg1,2
=-3.0V
Without RF
V
dd1
,2=50V
V
gg1,2
=-3.0V
P
out
=22dBm(Avg.)
(Note 1)
Note 1 : IM
3
and I
dd
test condition as follows:
IM
3
&I
dd
: f
0
=2.135GHz, f
1
=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch
67% clipping modulation(Peak/Avg.=8.5dB@0.01% probability(CCDF))
measured over 3.84MHz at f0-10MHz and f1+10MHz.
Note 2 : The RF parameters are measured with test fixture.
Edition 1.0
June 2005
1
EUDYNA [ EUDYNA DEVICES INC ]
