Eudyna GaN-HEMT 90W
Preliminary
FEATURES
・High
Voltage Operation : V
DS
=50V
・High
Power : 50.0dBm (typ.) @ P3dB
・High
Efficiency: 55%(typ.) @ P3dB
・Linear
Gain : 14.0dB(typ.) @ f=2.6GHz
・Proven
Reliability
ES/EGN26A090IV
High Voltage - High Power GaN-HEMT
DESCRIPTION
Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater
consistency and broad bandwidth for high power L-band amplifiers with 50V
operation, and gives you higher gain.
This device target applications are low current and wide band applications for
high voltage.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
V
DS
V
GS
P
t
T
stg
T
ch
Condition
T
c
=25
o
C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25
o
C)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
r
P
Symbol
V
DS
I
GF
I
GR
T
ch
im
l
e
Condition
R
G
=5
Ω
R
G
=5
Ω
V
p
V
GDO
P
3dB
η
d
G
L
R
th
a
n
i
Rating
Limit
50
<TBD
>-7.2
200
120
-5
150
-65 to +175
250
y
r
Unit
V
V
W
o
C
o
C
Unit
V
mA
mA
o
C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Item
Symbol Condition
min.
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
3dB Gain Compression Power
Drain Efficiency
Linear Gain
Thermal Resistance
V
DS
=50V I
DS
=36mA
I
GS
=- 18mA
V
DS
=50V
I
DS(DC)
=500mA
f=2.6GHz
Channel to Case
-
TBD
-
-1.0
-
TBD
Limit
Typ. Max.
-2.0
-350
50.0
55
14.0
1.3
-3.5
-
-
-
-
1.5
Unit
V
V
dBm
%
dB
o
C/W
Edition 1.2
Dec. 2005
1
EUDYNA [ EUDYNA DEVICES INC ]
