FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
High Associated Gain: 10.5dB (Typ.)@f=12GHz
Lg
≤
0.25µm, Wg = 200µm
Gold Gate Metallization for High Reliability
DESCRIPTION
The FHX04X, FHX05X, FHX06X are High Electron Mobility
Transistors (HEMT) intended for general purpose, low noise and high
gain amplifiers in the 2-18GHz frequency range. The devices are well
suited for telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Symbol
VDS
VGS
Pt*
Tstg
Tch
Rating
3.5
-3.0
180
-65 to +175
175
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
FHX04X
Associated Gain
Noise Figure
FHX05X
Associated Gain
Noise Figure
FHX06X
Associated Gain
Maximum Available Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
NF
Gas
NF
Gas
Ga(max) Same as above,
Gain matched
Rth
Channel to Case
Test Conditions
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 10mA
VDS = 2V, IDS = 1mA
IGS = -10µA
Min.
15
35
-0.2
-3.0
-
9.5
-
9.5
-
9.5
11.0
-
Limit
Typ. Max.
30
60
45
-
-0.7
-1.5
-
-
0.75 0.85
10.5
-
0.9
1.1
10.5
-
1.1
1.35
10.5
12.0
220
-
-
300
Unit
mA
mS
V
V
dB
dB
dB
dB
dB
dB
dB
°C/W
VDS = 2V
IDS = 10mA
f = 12GHz
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.3
October 2004
1