FHX45X
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
Low Noise Figure: 0.55dB (Typ.)@f=12GHz
High Associated Gain: 12.0dB (Typ.)@f=12GHz
Lg
≤
0.15µm, Wg = 280µm
Gold Gate Metallization for High Reliability
Gate
Drain
DESCRIPTION
The FHX45X is a Super High Electron Mobility Transistor
TM
(SuperHEMT ) intended for general purpose, ultra-low noise and high
gain amplifiers in the 2-18GHz frequency range. The device is well
suited for telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.1 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Gate
Source
Symbol
VDS
VGS
Pt*
Tstg
Tch
Rating
3.5
-3.0
290
-65 to +175
175
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
Rth
Condition
VDS = 2V, VGS =0V
VDS = 2V, IDS =10mA
VDS = 2V, IDS =1mA
IGS = -10µA
Min.
10
45
-0.1
-3.0
Limit
Typ. Max.
40
65
-1.0
-
0.55
12.0
155
85
-
-2.0
-
0.65
-
200
Unit
mA
mS
V
V
dB
dB
°C/W
-
VDS = 2V, IDS = 10mA,
f = 12GHz
10.0
Channel to Case
-
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.2
July 1999
1
EUDYNA [ EUDYNA DEVICES INC ]
