FHX76LP
Super Low Noise HEMT
FEATURES
• Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz
• High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz
• High Reliability
• Small Size SMT Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX76LP is a low noise SuperHEMT product designed for DBS
applications. This device uses a small ceramic package that is optimized
for high volume cost driven requirements.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
TM
Symbol
VDS
VGS
Pt
TSTG
TCH
Condition
Rating
3.5
-3.0
Unit
V
V
mW
°C
°C
Note
180
-65 to 150
150
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Noise Figure
Associated Gain
Thermal Resistance
CASE STYLES:
LP
Note:
RF parameters for LP devices are measured on a sample basis as follows:
Lot qty.
or
to
to
or
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
Symbol
I
DSS
gm
V
p
V
GSO
NF
G
as
Rth
Conditions
V
DS
= 2V, V
GS
=0V
V
DS
= 2V, I
DS
=10mA
V
DS
= 2V, I
DS
=1mA
I
GS
= -10µA
V
DS
= 2V,
I
DS
= 10mA,
f=12GHz
Channel to Case
Limits
Min. Typ. Max.
10
35
-0.1
-3.0
-
12.0
-
30
50
-0.7
-
0.40
13.5
300
60
-
-1.5
-
0.50
-
400
Unit
mA
mS
V
V
dB
dB
°C/W
1200
1201
3201
10001
less
3200
10000
over
Edition 1.1
August 2004
1
EUDYNA [ EUDYNA DEVICES INC ]
