FLK057XV
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
High Output Power: P1dB = 27.0dBm(Typ.)
High Gain: G1dB = 7.0dB(Typ.)
High PAE:
η
add = 32%(Typ.)
Proven Reliability
Source
Drain
Drain
DESCRIPTION
The FLK057XV chip is a power GaAs FET that is designed for
general purpose applications in the Ku-Band frequency range as
it provides superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
Ptot
Tstg
Tch
Condition
Source
Source
Gate
Gate
Rating
15
-5
Unit
V
V
W
°C
°C
Tc = 25°C
3.75
-65 to +175
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Power-added Efficiency
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Channel to Case
VDS = 10V
IDS
≈
0.6IDSS
f = 14.5GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 125mA
VDS = 5V, IDS = 10mA
IGS = -10µA
Min.
-
-
-1.0
-5
26
6
-
-
Limit
Typ. Max.
200
100
-2.0
-
27
7
32
20
300
-
-3.5
-
-
-
-
40
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.3
July 1999
1
EUDYNA [ EUDYNA DEVICES INC ]
