FLL1200IU-3
L-Band High Power GaAs FET
FEATURES
•
•
•
•
•
Push-Pull Configuration
High Power Output: 120W (Typ.)
High PAE: 44%.
Broad Frequency Range: 2400 to 2500 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in Wireless Local Loop (WLL) base
station amplifiers as it offers high gain, long term reliability and ease of use.
APPLICATIONS
• Solid State Base-Station Power Amplifier.
• WLL Communication Systems.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
187.5
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0mA and -57.6mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Note 1: The device shall be measured at a constant VGS condition.
Symbol
I
DSS
gm
V
p
V
GSO
P
out
GL
I
DSR
η
add
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 28.8A
V
DS
= 5V, I
DS
= 2.88A
I
GS
= -2.88mA
V
DS
= 12V
f = 2.5 GHz
I
DS
= 5.0A
Pin = 41.0dBm
Note 1
Channel to Case
Limits
Min. Typ. Max.
-
-
-1.0
-5
49.8
10.0
-
-
-
48
24
-2.0
-
50.8
11.0
20
44
0.6
-
-
-3.5
-
-
-
30
-
0.8
Unit
A
S
V
V
dBm
dB
A
%
°C/W
Edition 1.4
December 1999
1