FLL120MK
L-Band Medium & High Power GaAs FET
FEATURES
•
•
•
•
•
High Output Power: P1dB = 40.0dBm (Typ.)
High Gain: G1dB = 10.0dB (Typ.)
High PAE:
η
add = 40% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
37.5
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with
gate resistance of 50Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
η
add
Rth
Channel to Case
VDS = 10V
IDS
=
0.55 IDSS (Typ.),
f = 2.3GHz
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2400mA
VDS = 5V, IDS =240mA
IGS = -240µA
Min.
-
-
-1.0
-5
39.5
9.0
-
-
Limit
Typ. Max.
4000 6000
2000
-2.0
-
40.0
10.0
40
3.3
-
-3.5
-
-
-
-
4.0
Unit
mA
mS
V
V
dBm
dB
%
°C/W
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
CASE STYLE:
MK
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
EUDYNA [ EUDYNA DEVICES INC ]
