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FLL200IB-3 参数 Datasheet PDF下载

FLL200IB-3图片预览
型号: FLL200IB-3
PDF下载: 下载PDF文件 查看货源
内容描述: L波段中等和高功率GaAs FET [L-Band Medium & High Power GaAs FET]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 6 页 / 125 K
品牌: EUDYNA [ EUDYNA DEVICES INC ]
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FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
FEATURES
High Output Power: P1dB = 42.5dBm (Typ.)
High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1)
High PAE:
η
add = 34% (Typ.)
Proven Reliability
Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that
are specifically designed to provide high power at L-Band frequencies
with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Condition
Rating
15
-5
83.3
-65 to +175
175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
Drain Current
Power added Efficiency
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IB
FLL200IB-1
FLL200IB-2
FLL200IB-3
FLL200IB-1
FLL200IB-2
FLL200IB-3
Symbol
IDSS
gm
Vp
VGSO
P1dB
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4800mA
VDS = 5V, IDS = 480mA
IGS = -480µA
Min.
-
-
-1.0
-5
Limit
Typ. Max.
8
12
4000
-2.0
-
42.5
13.0
11.0
11.0
4.8
34
1.6
-
-
-3.5
-
-
-
-
-
6.0
-
1.8
80
Unit
A
mS
V
V
dBm
dB
dB
dB
A
%
°C/W
°C
G1dB
Idsr
η
add
Rth
∆T
ch
f=1.5GHz
f=2.3GHz 41.5
f=2.6GHz
VDS = 10V
IDS
=
0.6 IDSS f=1.5GHz 12.0
(Typ.) f=2.3GHz 10.0
f=2.6GHz 10.0
VDS = 10V
IDS
=
0.6 IDSS (Typ.)
Channel to Case
10V x Idsr x Rth
-
-
-
-
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1